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Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction
https://oist.repo.nii.ac.jp/records/1377
https://oist.repo.nii.ac.jp/records/137754d530b1-61ea-43c3-a70f-fe79e84ac98b
名前 / ファイル | ライセンス | アクション |
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190406_pssb_clean (4.4 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-04-21 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Juarez‐Perez, Emilio J.
× Juarez‐Perez, Emilio J.× Qi, Yabing |
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書誌情報 |
en : physica status solidi (b) 巻 256, 号 10, p. 1900126, 発行日 2019-05-20 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Carrier diffusion length and lifetime parameters for electron transport at nanoscale semiconductor slabs have been fitted using a 1D model and the decay data extracted from transient photoemission electron microscopy. Meanwhile, a conventional photoluminescence quenching measurement needs two separate samples with an active material between blocking and quenching layers to characterize the carrier transport properties. In this work, only one few-layer monocrystalline sample of gamma-InSe containing different thicknesses of active material is used to obtain a common diffusion coefficient consistent with previously reported values for vertical carrier diffusion in layered InSe. | |||||
出版者 | ||||||
出版者 | John Wiley & Sons | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0370-1972 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1521-3951 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1002/pssb.201900126 | |||||
権利 | ||||||
権利情報 | © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | |||||
権利 | ||||||
権利情報 | This is the peer reviewed version of the following article: Juarez‐Perez, E.J. and Qi, Y. (2019), Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction. Phys. Status Solidi B, 256: 1900126., which has been published in final form at https://doi.org/10.1002/pssb.201900126. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201900126 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |