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Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
https://oist.repo.nii.ac.jp/records/2622
https://oist.repo.nii.ac.jp/records/262276670e74-3503-4da8-ac86-0c8bc93c258c
名前 / ファイル | ライセンス | アクション |
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ReS2-MoSe2 Manuscript_Revision-am (1.4 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-04-19 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | energy transfer | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | charge transfer | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | transition metal dichalcogenide | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | heterostructure | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Karmakar, Arka
× Karmakar, Arka× Al-Mahboob, Abdullah× Petoukhoff, Christopher E.× Kravchyna, Oksana× Chan, Nicholas S.× Taniguchi, Takashi× Watanabe, Kenji× Dani, Keshav M. |
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書誌情報 |
en : ACS Nano 巻 16, 号 3, p. 3861-3869, 発行日 2022-03-09 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function material (ReS2 to MoSe2) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe2 photoluminescence (PL) enhancement as compared to the MoSe2 area alone. In a completely encapsulated sample, the HS PL emission further increases by a factor of 6.4. After completely blocking the CT process, more than 1 order of magnitude higher MoSe2 PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS2 and WSe2, CT dominates over ET, resulting in a severely quenched WSe2 PL. This study not only provides significant insight into the competing interlayer processes but also shows an innovative way to increase the PL emission intensity of the desired TMD material using the ET process by carefully choosing the right material combination for HS. | |||||
出版者 | ||||||
出版者 | American Chemical Society | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1936-0851 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1936-086X | |||||
PubMed番号 | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | PMID | |||||
関連識別子 | info:pmid/35262327 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1021/acsnano.1c08798 | |||||
権利 | ||||||
権利情報 | © 2022 American Chemical Society | |||||
権利 | ||||||
権利情報 | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsnano.1c08798. | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://pubs.acs.org/doi/10.1021/acsnano.1c08798 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |