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Evolution of nanodiamond seeds during the chemical vapor deposition of diamond on silicon substrates in oxygen-rich plasmas
https://oist.repo.nii.ac.jp/records/2699
https://oist.repo.nii.ac.jp/records/2699e4d3e5e5-a713-400b-9ba9-c6c3d636956a
名前 / ファイル | ライセンス | アクション |
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1-s2.0-S0169433221031354-main (5.5 MB)
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Creative Commons Attribution 4.0 International(https://creativecommons.org/licenses/by/4.0/)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-07-07 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Evolution of nanodiamond seeds during the chemical vapor deposition of diamond on silicon substrates in oxygen-rich plasmas | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Detonation nanodiamond seeds | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Nanocrystalline diamond | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Microcrystalline diamond | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Microwave plasma enhanced chemical vapor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | deposition | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Nucleation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Coalescence | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Giussani, Alessandro
× Giussani, Alessandro× Janssens, Stoffel D.× Vázquez-Cortés, David× Fried, Eliot |
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書誌情報 |
en : Applied Surface Science 巻 581, p. 152103, 発行日 2022-01-05 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Methane, oxygen and hydrogen in relative concentrations of 1:0.5:98.5 were employed to deposit diamond films by microwave plasma enhanced chemical vapor deposition on Si(001) substrates seeded with detonation nanodiamonds of density. The interaction between the nanodiamonds and the plasma was investigated as a function of the chamber pressure and the substrate temperature. At 40 Torr and 935 °C, 90% of the seeds were etched, and growth induction occurred with an impractically long time of 23.5 h. Varying the substrate temperature between 827 °C and 935 °C did not lead to faster growth induction. Reducing the chamber pressure to 30 Torr instead resulted in continuous films with induction time as short as 12 min. The induction time and the growth rate exhibited an Arrhenius dependence in the temperature range 769–884 °C with apparent activation energies of 3.7 eV/atom and 0.3 eV/atom, respectively. When at 30 Torr the concentration of the oxygen additive was raised to 1 vol%, the seeds were completely dissolved and no film deposition took place. However, film growth was possible with an oxygen admixture as high as 1.5 vol% on a diamond precursor layer of approximately 55 nm thickness, which was nucleated in an oxygen-free plasma. | |||||
出版者 | ||||||
出版者 | Elsevier B.V. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0169-4332 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.apsusc.2021.152103 | |||||
権利 | ||||||
権利情報 | © 2021 The Author(s). | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.sciencedirect.com/science/article/pii/S0169433221031354 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |