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Disorder induced power-law gaps in an insulator–metal Mott transition
https://oist.repo.nii.ac.jp/records/941
https://oist.repo.nii.ac.jp/records/9411de6f4ce-1d21-4816-bed7-7c249086b9a3
名前 / ファイル | ライセンス | アクション |
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main body (707.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-06-17 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Disorder induced power-law gaps in an insulator–metal Mott transition | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Wang, Zhenyu
× Wang, Zhenyu× Okada, Yoshinori× O’Neal, Jared× Zhou, Wenwen× Walkup, Daniel× Dhital, Chetan× Hogan, Tom× Clancy, Patrick× Kim, Young-June× Hu, Y. F.× Santos, Luiz H.× Wilson, Stephen D.× Trivedi, Nandini× Madhavan, Vidya |
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書誌情報 |
en : Proceedings of the National Academy of Sciences 巻 115, 号 44, p. 11198-11202, 発行日 2018-10-15 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | A correlated material in the vicinity of an insulator–metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power-law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems, but their origins are as-yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7 (0 ≤ x ≤ 0.5) which drive the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT, such as power-law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism, can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators. | |||||
出版者 | ||||||
出版者 | National Academy of Sciences | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0027-8424 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1091-6490 | |||||
PubMed番号 | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | PMID | |||||
関連識別子 | info:pmid/30322914 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1073/pnas.1808056115 | |||||
権利 | ||||||
権利情報 | © 2018 The Author(s). | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.pnas.org/content/115/44/11198 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |