@article{oai:oist.repo.nii.ac.jp:00001377,
 author = {Juarez‐Perez, Emilio J. and Qi, Yabing},
 issue = {10},
 journal = {physica status solidi (b)},
 month = {May},
 note = {Carrier diffusion length and lifetime parameters for electron transport at nanoscale semiconductor slabs have been fitted using a 1D model and the decay data extracted from transient photoemission electron microscopy. Meanwhile, a conventional photoluminescence quenching measurement needs two separate samples with an active material between blocking and quenching layers to characterize the carrier transport properties. In this work, only one few-layer monocrystalline sample of gamma-InSe containing different thicknesses of active material is used to obtain a common diffusion coefficient consistent with previously reported values for vertical carrier diffusion in layered InSe.},
 title = {Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction},
 volume = {256},
 year = {2019}
}