{"created":"2023-06-26T11:00:47.394300+00:00","id":1377,"links":{},"metadata":{"_buckets":{"deposit":"db3a00eb-43a0-45cf-9d0f-939300852355"},"_deposit":{"created_by":29,"id":"1377","owners":[29],"pid":{"revision_id":0,"type":"depid","value":"1377"},"status":"published"},"_oai":{"id":"oai:oist.repo.nii.ac.jp:00001377","sets":["6:48"]},"author_link":["8342","8343"],"item_10001_biblio_info_7":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-05-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageStart":"1900126","bibliographicVolumeNumber":"256","bibliographic_titles":[{},{"bibliographic_title":"physica status solidi (b)","bibliographic_titleLang":"en"}]}]},"item_10001_creator_3":{"attribute_name":"Author","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Juarez‐Perez, Emilio J."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Qi, Yabing"}],"nameIdentifiers":[{}]}]},"item_10001_description_5":{"attribute_name":"Abstract","attribute_value_mlt":[{"subitem_description":"Carrier diffusion length and lifetime parameters for electron transport at nanoscale semiconductor slabs have been fitted using a 1D model and the decay data extracted from transient photoemission electron microscopy. Meanwhile, a conventional photoluminescence quenching measurement needs two separate samples with an active material between blocking and quenching layers to characterize the carrier transport properties. In this work, only one few-layer monocrystalline sample of gamma-InSe containing different thicknesses of active material is used to obtain a common diffusion coefficient consistent with previously reported values for vertical carrier diffusion in layered InSe.","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"John Wiley & Sons"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1002/pssb.201900126","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"Related site","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201900126","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim"},{"subitem_rights":"This is the peer reviewed version of the following article: Juarez‐Perez, E.J. and Qi, Y. (2019), Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction. Phys. Status Solidi B, 256: 1900126., which has been published in final form at https://doi.org/10.1002/pssb.201900126. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0370-1972","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1521-3951","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"Author's flag","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-05-20"}],"displaytype":"detail","filename":"190406_pssb_clean.pdf","filesize":[{"value":"4.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"190406_pssb_clean","url":"https://oist.repo.nii.ac.jp/record/1377/files/190406_pssb_clean.pdf"},"version_id":"568b2430-2c18-4df3-8c4a-e54834980877"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"29","path":["48"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-04-21"},"publish_date":"2020-04-21","publish_status":"0","recid":"1377","relation_version_is_last":true,"title":["Determination of Carrier Diffusion Length Using Transient Electron Photoemission Microscopy in the GaAs/InSe Heterojunction"],"weko_creator_id":"29","weko_shared_id":29},"updated":"2023-06-26T11:52:02.227427+00:00"}