@article{oai:oist.repo.nii.ac.jp:00001621,
 author = {Bacon, David R. and Gill, Thomas B. and Rosamond, Mark and Burnett, Andrew D. and Dunn, Aniela and Li, Lianhe and Linfield, Edmund H. and Davies, A. G. and Dean, Paul and Freeman, Joshua R.},
 issue = {12},
 journal = {Optics Express},
 month = {May},
 note = {We report on the design, fabrication and characterisation of large-area photoconductive THz array structures, consisting of a thin LT-GaAs active region transferred to an insulating substrate using a wafer-scale bonding process. The electrically insulating, transparent substrate reduces the parasitic currents in the devices, allowing peak THz-fields as high as 120 kV cm−1 to be generated over a bandwidth >5 THz. These results are achieved using lower pulse energies than demanded by conventional photoconductive arrays and other popular methods of generating high-field THz radiation. Two device sizes are fully characterised and the emission properties are compared to generation by optical rectification in ZnTe. The device can be operated in an optically saturated regime in order to suppress laser noise.},
 pages = {17219--17231},
 title = {Photoconductive arrays on insulating substrates for high-field terahertz generation},
 volume = {28},
 year = {2020}
}