{"created":"2023-06-26T11:01:02.212521+00:00","id":1651,"links":{},"metadata":{"_buckets":{"deposit":"89415ffd-02fd-43ca-991a-7ef9eac1386a"},"_deposit":{"created_by":29,"id":"1651","owners":[29],"pid":{"revision_id":0,"type":"depid","value":"1651"},"status":"published"},"_oai":{"id":"oai:oist.repo.nii.ac.jp:00001651","sets":["6:75"]},"author_link":["9907","9905","9904","9908","9909","9903","9906"],"item_10001_biblio_info_7":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-03-23","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageStart":"043005","bibliographicVolumeNumber":"13","bibliographic_titles":[{},{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_10001_creator_3":{"attribute_name":"Author","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohta, Tomoharu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakai, Kosuke"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Taniguchi, Hiroki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Driesen, Benjamin"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Okada, Yoshinori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kobayashi, Kensuke"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Niimi, Yasuhiro"}],"nameIdentifiers":[{}]}]},"item_10001_description_5":{"attribute_name":"Abstract","attribute_value_mlt":[{"subitem_description":"We have fabricated thin films of a van der Waals (vdW) ferromagnetic metal Fe₅GeTe₂ and characterized them by measuring the anomalous Hall effect. While the bulk Fe₅GeTe₂ does not exhibit a perpendicular magnetic anisotropy (PMA) unlike Fe₃GeTe₂, PMA emerges in the thin film devices. Furthermore, the PMA is enhanced with decreasing thickness of Fe₅GeTe₂. In particular, a thin film (5 unit-cell layer) device fabricated with Fe₅GeTe₂ quenched at 1050 K has two times larger coercive field than that prepared without quenching. Such a PMA should be useful for future vdW spintronic devices.","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.35848/1882-0786/ab7f18","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"Related site","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://iopscience.iop.org/article/10.35848/1882-0786/ab7f18","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"© 2020 The Japan Society of Applied Physics."},{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ab7f18. "}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1882-0786","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"Author's flag","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-03-23"}],"displaytype":"detail","filename":"Ohta+et+al_2020_Appl._Phys._Express_10.35848_1882-0786_ab7f18.pdf","filesize":[{"value":"1.8 MB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"Ohta+et+al_2020_Appl._Phys._Express_10.35848_1882-0786_ab7f18","url":"https://oist.repo.nii.ac.jp/record/1651/files/Ohta+et+al_2020_Appl._Phys._Express_10.35848_1882-0786_ab7f18.pdf"},"version_id":"c8931c5c-2bf1-4f34-8802-c40c0f242178"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Enhancement of coercive field in atomically-thin quenched Fe5GeTe2","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Enhancement of coercive field in atomically-thin quenched Fe5GeTe2","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"29","path":["75"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-07-29"},"publish_date":"2020-07-29","publish_status":"0","recid":"1651","relation_version_is_last":true,"title":["Enhancement of coercive field in atomically-thin quenched Fe5GeTe2"],"weko_creator_id":"29","weko_shared_id":29},"updated":"2023-06-26T11:45:26.511848+00:00"}