@article{oai:oist.repo.nii.ac.jp:00001917,
 author = {Oka, Hirofumi and Okada, Yoshinori and Kaminaga, Kenichi and Oka, Daichi and Hitosugi, Taro and Fukumura, Tomoteru},
 issue = {5},
 journal = {Applied Physics Letters},
 month = {Aug},
 note = {We investigated lateral nanowires at the topmost layer of SrVO3 (001) ultrathin films using in situ low-temperature scanning tunneling microscopy and spectroscopy. The nanowires were spontaneously formed in the topmost layer of SrVO3 with a (√2 × √2)-R45° reconstruction on the terrace of a (√5 × √5)-R26.6° reconstruction. The electronic states of nanowires were significantly influenced by the nanowire width. With reducing the nanowire width from 5.5 nm to 1.7 nm, the zero-bias conductance of nanowires steeply decreased toward zero, exhibiting a metal–insulator transition possibly driven by dimensional crossover, previously observed in thickness-reduced SrVO3 ultrathin films.},
 title = {Width-induced metal–insulator transition in SrVO3 lateral nanowires spontaneously formed on the ultrathin film},
 volume = {117},
 year = {2020}
}