{"created":"2023-06-26T11:01:15.238146+00:00","id":1917,"links":{},"metadata":{"_buckets":{"deposit":"e48b1263-cee7-40ae-8051-ddece719f320"},"_deposit":{"created_by":27,"id":"1917","owners":[27],"pid":{"revision_id":0,"type":"depid","value":"1917"},"status":"published"},"_oai":{"id":"oai:oist.repo.nii.ac.jp:00001917","sets":["6:75"]},"author_link":["12644","12647","12645","12643","12646","12642"],"item_10001_biblio_info_7":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-08-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"051603","bibliographicVolumeNumber":"117","bibliographic_titles":[{},{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_10001_creator_3":{"attribute_name":"Author","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Oka, Hirofumi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Okada, Yoshinori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kaminaga, Kenichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Oka, Daichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hitosugi, Taro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukumura, Tomoteru"}],"nameIdentifiers":[{}]}]},"item_10001_description_5":{"attribute_name":"Abstract","attribute_value_mlt":[{"subitem_description":"We investigated lateral nanowires at the topmost layer of SrVO3 (001) ultrathin films using in situ low-temperature scanning tunneling microscopy and spectroscopy. The nanowires were spontaneously formed in the topmost layer of SrVO3 with a (√2 × √2)-R45° reconstruction on the terrace of a (√5 × √5)-R26.6° reconstruction. The electronic states of nanowires were significantly influenced by the nanowire width. With reducing the nanowire width from 5.5 nm to 1.7 nm, the zero-bias conductance of nanowires steeply decreased toward zero, exhibiting a metal–insulator transition possibly driven by dimensional crossover, previously observed in thickness-reduced SrVO3 ultrathin films.","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/5.0018240","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"Related site","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://aip.scitation.org/doi/full/10.1063/5.0018240","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"© 2020 Author(s)."},{"subitem_rights":"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (Appl. Phys. Lett. 117, 051603 (2020);) and may be found at (https://doi.org/10.1063/5.0018240)"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"Author's flag","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-08-06"}],"displaytype":"detail","filename":"Oka-2020-Width-induced metal–insulator transit.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Oka-2020-Width-induced metal–insulator transit","url":"https://oist.repo.nii.ac.jp/record/1917/files/Oka-2020-Width-induced metal–insulator transit.pdf"},"version_id":"7cb947d1-c19f-48eb-b428-75f5c3822d97"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Width-induced metal–insulator transition in SrVO3 lateral nanowires spontaneously formed on the ultrathin film","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Width-induced metal–insulator transition in SrVO3 lateral nanowires spontaneously formed on the ultrathin film","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"27","path":["75"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-02-01"},"publish_date":"2021-02-01","publish_status":"0","recid":"1917","relation_version_is_last":true,"title":["Width-induced metal–insulator transition in SrVO3 lateral nanowires spontaneously formed on the ultrathin film"],"weko_creator_id":"27","weko_shared_id":27},"updated":"2023-06-26T11:40:58.336140+00:00"}