{"created":"2023-06-26T11:01:16.211923+00:00","id":1935,"links":{},"metadata":{"_buckets":{"deposit":"1b8f3e62-52ae-4096-beb8-ab85d201e7f8"},"_deposit":{"created_by":30,"id":"1935","owners":[30],"pid":{"revision_id":0,"type":"depid","value":"1935"},"status":"published"},"_oai":{"id":"oai:oist.repo.nii.ac.jp:00001935","sets":["6:213"]},"author_link":["12726","12723","12721","12720","12717","12722","12718","12719","12724","12727","12725"],"item_10001_biblio_info_7":{"attribute_name":"Bibliographic Information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-12-23","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicPageStart":"245203","bibliographicVolumeNumber":"102","bibliographic_titles":[{},{"bibliographic_title":"Physical Review B","bibliographic_titleLang":"en"}]}]},"item_10001_creator_3":{"attribute_name":"Author","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takeda, Takahito"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakamoto, Shoya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Araki, Kohsei"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujisawa, Yuita"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Anh, Le Duc"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Thanh Tu, Nguyen"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takeda, Yukiharu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujimori, Shin-ichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujimori, Atsushi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tanaka, Masaaki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kobayashi, Masaki"}],"nameIdentifiers":[{}]}]},"item_10001_description_5":{"attribute_name":"Abstract","attribute_value_mlt":[{"subitem_description":" [Formula: see the attached file] is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature (Tc) is above 300 K when the Fe concentration x is equal to or higher than similar to ∼0.20. However, the origin of the high Tc in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the x dependence of the Fe 3d states in [Formula: see text] (x = 0.05, 0.15, and 0.25) thin films. The observed Fe 2p-3d RPES spectra reveal that the Fe-3d impurity band (IB) crossing the Fermi level becomes broader with increasing x, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3d partial density of states and the first-principles calculations suggests that the Fe-3d IB originates from the minority-spin (↓) e states. The results indicate that enhancement of the double-exchange interaction between e↓ electrons with increasing x is the origin of the high Tc in (Ga,Fe)Sb.","subitem_description_type":"Other"}]},"item_10001_publisher_8":{"attribute_name":"Publisher","attribute_value_mlt":[{"subitem_publisher":"American Physical Society "}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1103/PhysRevB.102.245203","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"Related site","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.245203","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"Rights","attribute_value_mlt":[{"subitem_rights":"© 2020 American Physical Society."}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2469-9950","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"2469-9969","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"Author's flag","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-02-17"}],"displaytype":"detail","filename":"Takeda-2020-Evolution of Fe 3d impurity band s.pdf","filesize":[{"value":"817.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Takeda-2020-Evolution of Fe 3d impurity band s","url":"https://oist.repo.nii.ac.jp/record/1935/files/Takeda-2020-Evolution of Fe 3d impurity band s.pdf"},"version_id":"4f496f1a-2ee9-4593-a129-e50e7028a503"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Evolution of Fe 3d impurity band state as the origin of high Curie temperature in the p-type ferromagnetic semiconductor (Ga,Fe)Sb","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Evolution of Fe 3d impurity band state as the origin of high Curie temperature in the p-type ferromagnetic semiconductor (Ga,Fe)Sb","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"30","path":["213"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-02-17"},"publish_date":"2021-02-17","publish_status":"0","recid":"1935","relation_version_is_last":true,"title":["Evolution of Fe 3d impurity band state as the origin of high Curie temperature in the p-type ferromagnetic semiconductor (Ga,Fe)Sb"],"weko_creator_id":"30","weko_shared_id":30},"updated":"2023-06-26T11:39:12.440382+00:00"}