@article{oai:oist.repo.nii.ac.jp:00002074,
 author = {Ohta, Tomoharu and Tokuda, Masashi and Iwakiri, Shuichi and Sakai, Kosuke and Driesen, Benjamin and Okada, Yoshinori and Kobayashi, Kensuke and Niimi, Yasuhiro},
 issue = {2},
 journal = {AIP Advances},
 month = {Feb},
 note = {We have performed magnetoresistance (MR) measurements on van der Waals ferromagnetic devices using quenched- (Q-) and nonquenched- (NQ-) Fe₅GeTe₂ crystals. A clear butterfly-shaped hysteresis has been observed for thin-film (less than 6 unit-cell layer) Q- and NQ-Fe₅GeTe₂ devices, but not for thicker film ones. The switching field of the butterfly-shaped MR is consistent with the coercive filed obtained from the Hall measurements. The MR ratio of the butterfly peak reaches about 10% at maximum, which is much larger than that observed with conventional magnetic materials. Such a large MR ratio would be related to magnetic fluctuations due to the complicated magnetic structure in this material.},
 title = {Butterfly-shaped magnetoresistance in van der Waals ferromagnet Fe5GeTe2},
 volume = {11},
 year = {2021}
}