WEKO3
アイテム
{"_buckets": {"deposit": "ca1a2826-8222-4c39-87a2-e6d8e5323dda"}, "_deposit": {"created_by": 31, "id": "2620", "owners": [31], "pid": {"revision_id": 0, "type": "depid", "value": "2620"}, "status": "published"}, "_oai": {"id": "oai:oist.repo.nii.ac.jp:00002620", "sets": ["48"]}, "author_link": ["16993", "16995", "16989", "16994", "16996", "16992", "16991", "16997", "16990"], "item_10001_biblio_info_7": {"attribute_name": "Bibliographic Information", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2022-04-08", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageStart": "99", "bibliographicVolumeNumber": "14", "bibliographic_titles": [{}, {"bibliographic_title": "Nano-Micro Letters", "bibliographic_titleLang": "en"}]}]}, "item_10001_creator_3": {"attribute_name": "Author", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Wu, Tianhao"}], "nameIdentifiers": [{"nameIdentifier": "16989", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Liu, Xiao"}], "nameIdentifiers": [{"nameIdentifier": "16990", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Luo, Xinhui"}], "nameIdentifiers": [{"nameIdentifier": "16991", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Segawa, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "16992", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tong, Guoqing"}], "nameIdentifiers": [{"nameIdentifier": "16993", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zhang, Yiqiang"}], "nameIdentifiers": [{"nameIdentifier": "16994", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ono, Luis K."}], "nameIdentifiers": [{"nameIdentifier": "16995", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Qi, Yabing"}], "nameIdentifiers": [{"nameIdentifier": "16996", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Han, Liyuan"}], "nameIdentifiers": [{"nameIdentifier": "16997", "nameIdentifierScheme": "WEKO"}]}]}, "item_10001_description_5": {"attribute_name": "Abstract", "attribute_value_mlt": [{"subitem_description": "Lead-free tin perovskite solar cells (PSCs) have undergone rapid development in recent years and are regarded as a promising eco-friendly photovoltaic technology. However, a strategy to suppress charge recombination via a built-in electric field inside a tin perovskite crystal is still lacking. In the present study, a formamidinium tin iodide (FASnI3) perovskite absorber with a vertical Sn2+ gradient was fabricated using a Lewis base-assisted recrystallization method to enhance the built-in electric field and minimize the bulk recombination loss inside the tin perovskites. Depth-dependent X-ray photoelectron spectroscopy revealed that the Fermi level upshifts with an increase in Sn2+ content from the bottom to the top in this heterogeneous FASnI3 film, which generates an additional electric field to prevent the trapping of photo-induced electrons and holes. Consequently, the Sn2+-gradient FASnI3 absorber exhibits a promising efficiency of 13.82% for inverted tin PSCs with an open-circuit voltage increase of 130 mV, and the optimized cell maintains over 13% efficiency after continuous operation under 1-sun illumination for 1,000 h.", "subitem_description_type": "Other"}]}, "item_10001_publisher_8": {"attribute_name": "Publisher", "attribute_value_mlt": [{"subitem_publisher": "Springer Nature"}]}, "item_10001_relation_13": {"attribute_name": "PubMedNo.", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "info:pmid/35394568", "subitem_relation_type_select": "PMID"}}]}, "item_10001_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "info:doi/10.1007/s40820-022-00842-4", "subitem_relation_type_select": "DOI"}}]}, "item_10001_relation_17": {"attribute_name": "Related site", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://link.springer.com/article/10.1007/s40820-022-00842-4", "subitem_relation_type_select": "URI"}}]}, "item_10001_rights_15": {"attribute_name": "Rights", "attribute_value_mlt": [{"subitem_rights": "© The Author(s) 2022"}]}, "item_10001_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "2311-6706", "subitem_source_identifier_type": "ISSN"}, {"subitem_source_identifier": "2150-5551", "subitem_source_identifier_type": "ISSN"}]}, "item_10001_version_type_20": {"attribute_name": "Author\u0027s flag", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-04-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Wu-2022-Heterogeneous FASnI(3) Absorber with E.pdf", "filesize": [{"value": "1.9 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "CC BY 4.0\nCreative Commons Attribution 4.0 International (https://creativecommons.org/licenses/by/4.0/)", "licensetype": "license_free", "mimetype": "application/pdf", "size": 1900000.0, "url": {"label": "Wu-2022-Heterogeneous FASnI(3) Absorber with E", "url": "https://oist.repo.nii.ac.jp/record/2620/files/Wu-2022-Heterogeneous FASnI(3) Absorber with E.pdf"}, "version_id": "4f0b6144-c938-4735-a772-4f116a0bacd3"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Gradient FASnI3 absorber", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Built-in electric field", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Bulk charge recombination", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Lead-free perovskite solar cell", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Heterogeneous FASnI3 Absorber with Enhanced Electric Field for High-Performance Lead-Free Perovskite Solar Cells", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Heterogeneous FASnI3 Absorber with Enhanced Electric Field for High-Performance Lead-Free Perovskite Solar Cells", "subitem_title_language": "en"}]}, "item_type_id": "10001", "owner": "31", "path": ["48"], "permalink_uri": "https://oist.repo.nii.ac.jp/records/2620", "pubdate": {"attribute_name": "公開日", "attribute_value": "2022-04-19"}, "publish_date": "2022-04-19", "publish_status": "0", "recid": "2620", "relation": {}, "relation_version_is_last": true, "title": ["Heterogeneous FASnI3 Absorber with Enhanced Electric Field for High-Performance Lead-Free Perovskite Solar Cells"], "weko_shared_id": 31}
Heterogeneous FASnI3 Absorber with Enhanced Electric Field for High-Performance Lead-Free Perovskite Solar Cells
https://oist.repo.nii.ac.jp/records/2620
https://oist.repo.nii.ac.jp/records/2620581763bd-bdea-4928-8183-d01745f3023c
名前 / ファイル | ライセンス | アクション |
---|---|---|
Wu-2022-Heterogeneous FASnI(3) Absorber with E (1.9 MB)
|
CC BY 4.0
Creative Commons Attribution 4.0 International (https://creativecommons.org/licenses/by/4.0/) |
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2022-04-19 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Heterogeneous FASnI3 Absorber with Enhanced Electric Field for High-Performance Lead-Free Perovskite Solar Cells | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Gradient FASnI3 absorber | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Built-in electric field | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Bulk charge recombination | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Lead-free perovskite solar cell | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Wu, Tianhao
× Wu, Tianhao× Liu, Xiao× Luo, Xinhui× Segawa, Hiroshi× Tong, Guoqing× Zhang, Yiqiang× Ono, Luis K.× Qi, Yabing× Han, Liyuan |
|||||
書誌情報 |
en : Nano-Micro Letters 巻 14, 号 1, p. 99, 発行日 2022-04-08 |
|||||
抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Lead-free tin perovskite solar cells (PSCs) have undergone rapid development in recent years and are regarded as a promising eco-friendly photovoltaic technology. However, a strategy to suppress charge recombination via a built-in electric field inside a tin perovskite crystal is still lacking. In the present study, a formamidinium tin iodide (FASnI3) perovskite absorber with a vertical Sn2+ gradient was fabricated using a Lewis base-assisted recrystallization method to enhance the built-in electric field and minimize the bulk recombination loss inside the tin perovskites. Depth-dependent X-ray photoelectron spectroscopy revealed that the Fermi level upshifts with an increase in Sn2+ content from the bottom to the top in this heterogeneous FASnI3 film, which generates an additional electric field to prevent the trapping of photo-induced electrons and holes. Consequently, the Sn2+-gradient FASnI3 absorber exhibits a promising efficiency of 13.82% for inverted tin PSCs with an open-circuit voltage increase of 130 mV, and the optimized cell maintains over 13% efficiency after continuous operation under 1-sun illumination for 1,000 h. | |||||
出版者 | ||||||
出版者 | Springer Nature | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2311-6706 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2150-5551 | |||||
PubMed番号 | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | PMID | |||||
関連識別子 | info:pmid/35394568 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1007/s40820-022-00842-4 | |||||
権利 | ||||||
権利情報 | © The Author(s) 2022 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://link.springer.com/article/10.1007/s40820-022-00842-4 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |