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Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons
https://oist.repo.nii.ac.jp/records/2685
https://oist.repo.nii.ac.jp/records/2685f06be6a9-69b5-4513-8227-f2a3e3d18b08
名前 / ファイル | ライセンス | アクション |
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Barin-Growth Optimization and Device Integrati (8.8 MB)
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CC BY 4.0
Creative Commons Attribution 4.0 International (https://creativecommons.org/licenses/by/4.0/) |
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-07-06 | |||||
タイトル | ||||||
タイトル | Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | field-effect transistors | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | graphene nanoribbons | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | on-surface synthesis | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Raman spectroscopy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | scanning tunneling microscopy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | temperature programmed X-ray photoelectron spectroscopy | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Borin Barin, Gabriela
× Borin Barin, Gabriela× Sun, Qiang× Di Giovannantonio, Marco× Du, Cheng‐Zhuo× Wang, Xiao‐Ye× Llinas, Juan Pablo× Mutlu, Zafer× Lin, Yuxuan× Wilhelm, Jan× Overbeck, Jan× Daniels, Colin× Lamparski, Michael× Sahabudeen, Hafeesudeen× Perrin, Mickael L.× Urgel, José I.× Mishra, Shantanu× Kinikar, Amogh× Widmer, Roland× Stolz, Samuel× Bommert, Max× Pignedoli, Carlo× Feng, Xinliang× Calame, Michel× Müllen, Klaus× Narita, Akimitsu× Meunier, Vincent× Bokor, Jeffrey× Fasel, Roman× Ruffieux, Pascal |
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書誌情報 |
en : Small p. 2202301, 発行日 2022-06-17 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultrahigh vacuum conditions from Br- and I-substituted precursors. It is shown that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed the integration of 5-AGNRs into devices and the realization of the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs. | |||||
出版者 | ||||||
出版者 | Wiley-VCH GmbH | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1613-6810 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1613-6829 | |||||
PubMed番号 | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | PMID | |||||
関連識別子 | info:pmid/35713270 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1002/smll.202202301 | |||||
権利 | ||||||
権利情報 | © 2022 The Author(s) | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://onlinelibrary.wiley.com/doi/10.1002/smll.202202301 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |