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  2. Year of 2025

From Bottom to Top Interfaces and Layers: the Holistic Engineering Approach for Efficient, Stable and Large-Area n-i-p Structured Perovskite Solar Cells

https://doi.org/10.15102/0002000985
https://doi.org/10.15102/0002000985
cc2962a1-a03a-4173-8062-48645ed7fe5e
Name / File License Actions
ZhangJiahaoFulltext.pdf ZhangJiahaoFulltext.pdf (16.8 MB)
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ZhangJiahaoExamAbstract.pdf ZhangJiahaoExamAbstract.pdf (48 KB)
JiahaoZhangSumarry.pdf JiahaoZhangSumarry.pdf (96 KB)
Item type 学位論文 / Thesis or Dissertation(1)
PubDate 2025-10-17
Title
Title ボトムアップ界面・層制御による高効率・高安定・大面積n-i-p構造ペロブスカイト太陽電池の統合的エンジニアリング
Language ja
Title
Title From Bottom to Top Interfaces and Layers: the Holistic Engineering Approach for Efficient, Stable and Large-Area n-i-p Structured Perovskite Solar Cells
Language en
Language
Language eng
Keyword
Subject Scheme Other
Subject Semiconductor | Photovoltaics | Perovskite | Perovskite Solar Cells | Material Science
Resource Type
Resource Type Identifier http://purl.org/coar/resource_type/c_db06
Resource Type doctoral thesis
Identifier Registration
Identifier Registration 10.15102/0002000985
Identifier Registration Type JaLC
Access Right
Access Rights open access
Access Rights URI http://purl.org/coar/access_right/c_abf2
Author Zhang, Jiahao

× Zhang, Jiahao

en Zhang, Jiahao

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Abstract
Description Type Abstract
Description Metal halide perovskites have emerged rapidly as promising materials for solar energy harvesting, with perovskite solar cell (PSC) power conversion efficiencies (PCEs) reaching 27%. Despite their excellent optoelectronic properties, low production cost, and facile up-scalability, the commercialization of perovskite solar modules (PSMs) still faces challenges in achieving long-term stable and large-area devices. This thesis focuses on optimizing the widely used n-i p architecture, where the bottom electron transport layer (ETL) is coated with the perovskite light-absorber, followed by a hole transport layer (HTL). For ensuring the stability of metal oxides layer used in HTL and ETL as bottom layers against the solution processed perovskite layer deposition, different metal oxides and perovskite compositions were well studied to understand and develop strategies for protecting the bottom metal oxide. To achieve a uniform large-area perovskite layer, the hybrid-chemical-vapor-deposition (HCVD) method was explored for perovskite film deposition. In addition, the perovskite seeding and coordination solvent engineering strategies were incorporated to improve crystallinity, facilitate the growth of larger grains, and promote the full conversion of the inorganic lead species during film growth. Furthermore, the HCVD method was extended to inorganic perovskite films. By using vapor amine molecules to mediate the formation of low-dimensional perovskite intermediate phases from CsPbI3, the crystallinity and orientation of CsPbI3 were enhanced, and it was scalable for fabricating large-area modules. A surface passivation strategy based on a hydrophobic molecule of perfluorobutanesulfonyl chloride (PFSC) was developed for CsPbI3-based PSMs, which passivates the perovskite surface, enhances interfacial contact with HTL, adjusts energy levels, and reduces surface defects, resulting in PSMs with a high certified efficiency and prolonged device operation lifetime. To further enhance PSM stability, the conventional 2,2’,7,7- tetrakis(N,N-di(4-methoxyphenylamine)-9,9’-spirobifluorene (spiro-OMeTAD, spiro) based HTL was modified. The commonly employed additive of lithium bis(trifluoromethane)sulfonimide (LiTFSI) was replaced by ammonia bis(trifluoromethane)sulfonimide (NH4TFSI), and a light-oxidation doping treatment was developed to improve the oxidation process in solution. This method avoids the time-consuming post-oxidation step in spiro-HTL in n-i-p devices. This study also examined the beneficial effects of TFSI salts in forming low-dimensional (2D) perovskite structures with enhanced thermal stability and prolonged device lifetime.
Language en
Exam Date
2025-08-15
Degree Conferral Date
Date Granted 2025-09-30
Degree
Degree Name Doctor of Philosophy
Degree Referral Number
Dissertation Number 甲第206号
Degree Conferrral Institution
Degree Grantor Name Identifier Scheme kakenhi
Degree Grantor Name Identifier 38005
Degree Grantor Name Okinawa Institute of Science and Technology Graduate University
Version Format
Version Type VoR
Version Type Resource http://purl.org/coar/version/c_970fb48d4fbd8a85
Copyright Information
Rights © 2025 The Author.
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